OMRON E5DC-QX2DSM-802 datasheet PDF

Protective tubing length: 200mm.
Lead wire length: 4m.
Element type: J (IC).
A Wide Variety of High-precision.
Temperature Sensors.
Previous models with M3 screw connections have been joined,
by new models with ferrules to help reduce wiring work.
Ideal for the thermal input devices of Temperature Controllers E5DC-QX2DSM-802 PDF.
Select from a wide variety of Temperature Sensors according,
to the temperature to be measured, location, and environment,
and also according to the type and shape of the terminal E5DC-QX2DSM-802 E3F3-T36 detection methods: the firing pattern,
Lead extraction: CN M12,
Type: Plastic appearance; PNP output,
Threaded cylindrical photoelectric sensor, built-in amplifier,
Photoelectric sensor with proximity sensor appearance
High anti interference with optoelectronic -IC technologySensing method: Retro reflective E5DC-QX2DSM-802 PDF.
Appearance: Horizontal.
Connection method: Pre-wired .
Sensing distance: 300 mm .
Recommended application: Flat object,
Detecting glass wafers and LCD glass circuit boards, --;
Cylindrical object,
Detecting plastic bottles and other transparent containers, Ideal.
Ideal for Detecting Glass Wafers,
and Other Transparent Objects,
Detects glass wafers and LCD glass circuit boards E5DC-QX2DSM-802 PDF. High performance price ratio standard type proximity sensor.
Standard cable protector.
The new DC two-wire type.
Non polar proximity sensor.
Type: DC three wire / connector type.
Shape: non shield, M8.
Detection range: 2mm.
Output configuration: PNP.
Action mode: NO. Sensing method: Diffuse-reflective Sensors.
Appearance: Horizontal.
Connection method: Pre-wired.
Sensing distance: 100 mm (wide view).
Functiions: Timer Self Diagnosis E5DC-QX2DSM-802 datasheet.
Model: NPN output.
Ordering Information.
Built-in Amplifier Photoelectric Sensors. E3F3-D17M detection method: diffuse reflection type,
Lead extraction: CN M12,
Type: metal appearance; NPN output,
Threaded cylindrical phhotoelectric sensor, built-in amplifier,
Photoelectric sensor with proximity sensor appearance
High anti interference with optoelectronic -IC technology