Detection mode: diffuse reflection type.
Connection: socket type (M12).
Detection distance: infrared 100mm.
Output mode: NPN output.
Name: Small reflector.
Directional angle: 30° min.
Ambient operating temperature range: -25 to 55°C.
Ambient storage temperature range: -40 to 70°C.
Ambient operating humidity range: 35% to 95%.
Ambient storage humidity range: 35% to 95%.
Degree of protection: IEC IP67.
Accessories: --. Size: M8, Non-shielded OMRON E3Z-FDN25.
Sensing distance: 4.0 mm.
Connection: M12 connector.
Body material: Stainless steel
E3Z-FDN25
Thread length (overall length): 49 (65).
Output configuration: NPN.
Operation mode NC.
Safe Mounting with Greater.
Sensing Distance.
Ensures a sensing distance approximately 1.5 to 2,
times larger than that of any conventional OMRON Sensor.
Problems such as the collision of workpieces are eliminated OMRON E3Z-FDN25.
Full range of standard sizes (M8, M12, M18 and,
M30; both long and short barrels).
Modular construction simplifies customization. Item: Advanced models, Twin-output models.
Functions: Area output, open circuit detection, differential operation.
Model: PNP output.
Proximity Sensor with Separate.
Amplifier Enables Easily Making High.
precision Sensitivity Settings.
Wide variety of Sensor Heads to select according to the,
application OMRON E3Z-FDN25. Flexible cables are used between Preamplifiers,
and Amplifier Units of the Sensor Heads.
High resistance to changes in ambient temperature.
Temperature characteristics of 0 E3Z-FDN25 OMRON. 08%/°C (for 5.4-dia. models).
Make simple and reliable detection settings with micron,
level precision using the teaching function.
Check the sensing excess gain level on the digital display E3Z-FDN25 OMRON.
Support for high-precision positioning and screening with,
fine positioning to maximize variattions E3Z-FDN25.
The E2C-EDA0 supports an EtherCAT Sensor,
Communications Unit or CompoNet Sensor,
Communications Unit. E3F3-R32 detection methods: Regression reflection type,
Wire lead out type,
Type: Plastic appearance; PNP output,
Threaded cylindrical phhotoelectric sensor, built-in amplifier,
Photoelectric sensor with proximity sensor appearance
High anti interference with optoelectronic -IC technology